Tunnel-structured willemite Zn2SiO4: Electronic structure, elastic, and thermal properties
نویسندگان
چکیده
Abstract Willemite Zn 2 SiO 4 crystallizes in such a way that and Si are tetrahedrally coordinated with O an ionic-covalent manner to form ZnO tetrahedra as the building units. The corner-sharing, of which one SiO4 tetrahedron connects eight tetrahedra, links four tetrahedra. unique crystallographic configuration gives rise parallel tunnels diameter 5.7 Å along c -axis direction. tunnel structure definitely correlates its interesting elastic thermal properties. On hand, modulus, coefficient expansion (CTE), conductivity low. has low Vickers hardness 6.6 GPa at 10 N 2.34 W/(m·K) 1073 K. other modulus CTE significantly larger than those - b -axes, showing obvious anisotropy. Specifically, Young’s z direction ( E = 179 GPa) is almost twice x y directions 93 GPa). high anisotropy ascribed empty -axis, capable more accommodating -axes. striking properties hardness, CTE, make it much useful various fields ceramics, expansion, insulation, machining tools.
منابع مشابه
Study of Electronic Structure, Thermal Conductivity, Elastic and Optical Properties of α, β, γ-Graphyne
In recent years, graphyne was found to be the only 2D carbon material that has both sp and sp² hybridization. It has received significant attention because of its great potential in the field of optoelectronics, which arises due to its small band gap. In this study, the structural stability, electronic structure, elasticity, thermal conductivity and optical properties of α, β, γ-graphynes were ...
متن کاملElectronic, Magnetic and Thermal Properties of Graphene-Diamond Hybrid Structure
Structure T. Shiga, S. Konabe, 3 J. Shiomi, 4 T. Yamamoto, S. Maruyama, and S. Okada 3, a) Department of Mechanical Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075, Japan Japan Science and Technology Agen...
متن کاملPhotoluminescence behavior of Ti-doped Zn2SiO4 thin film phosphors
This work investigates the luminescent properties and structure of Zn2SiO4:Ti thin-film phosphor, before and after annealing up to 1000C. The Zn2SiO4:Ti films are fabricated by RF sputtering using ceramic target. After annealing at 800C the β-Zn2SiO4 phase is formed, but this phase is not suitable for the application in electroluminescence. The willemite structure (α-Zn2SiO4) is formed after an...
متن کاملElectronic structure of FeÕsemiconductorÕFe„001... tunnel junctions
The electronic ground-state properties of Fe/semiconductor/Fe~001! tunnel junctions are studied by means of the ab initio screened Korringa-Kohn-Rostoker method. We focus on the magnetic properties, charge transfer, local, and qi-resolved density of states of these systems. We consider in detail Fe/ZnSe/Fe~001! tunnel junctions and compare their electronic properties with junctions with Si and ...
متن کاملinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Advanced Ceramics
سال: 2022
ISSN: ['2227-8508', '2226-4108']
DOI: https://doi.org/10.1007/s40145-022-0607-1